RU65R340L
N-Channel Advanced Power MOSFET
Features
Pin Description
• 650V/12A,
D
RDS (ON) =340mΩ(Typ.)@VGS=10V
• Ultra Low Rdson
• Fast Switching
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
TO252
D
S
Applications
• AC/DC Power Conversion in Switched Mode Power Supplies
(SMPS)
• Adapter
• LED driver
G
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
650
±30
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
TSTG
IS
-55 to 175
12
TC=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
48
12
A
A
IDP
②
Continuous Drain Current(VGS=10V)
Maximum Power Dissipation
ID
7.5
84
PD
W
42
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
RJC
RJA
1.8
100
°C/W
°C/W
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
100
mJ
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2018
1
www.ruichips.com