Datasheet > RU7085R

RU7085R

更新时间： 2024-04-09 19:03:16

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	300K
描述
TO-220

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数据手册

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RU7085R 数据手册

RU7085R

N-Channel Advanced Power MOSFET

Features

Pin Description

• 70V/85A,

DS (ON) =6mΩ(Typ.)@VGS=10V

• Super High Dense Cell Design

• Ultra Low On-Resistance

• 100% avalanche tested

TO-220

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

• Power Supply

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

±25

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

Storage Temperature Range

T_STG

-55 to 175

①

I_S

Diode Continuous Forward Current

T_C=25°C

Mounted on Large Heat Sink

②

340

I_DP

300μs Pulse Drain Current Tested

①

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

I_D

Continuous Drain Current(V_GS=10V)

125

P_D

Maximum Power Dissipation

62.5

1.2

R_qJC

Thermal Resistance-Junction to Case

°C/W

Drain-Source Avalanche Ratings

③

256

Avalanche Energy, Single Pulsed

E_AS

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– MAR., 2012

www.ruichips.com

12 3 4 5 6 7...9

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