Datasheet > RU6888R3

RU6888R3

更新时间： 2024-04-09 19:03:05

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	451K
描述
TO220S

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RU6888R3 数据手册

RU6888R3

N-Channel Advanced Power MOSFET

Features

Pin Description

• 68V/88A,

R_{DS (ON)}=6mΩ(Typ.)@V_GS=10V

Insulation Slug

• Insulation Slug(V_ISO≥1500VAC)

• Ultra Low On-Resistance

• Exceptional dv/dt capability

• Fast Switching and Fully Avalanche Rated

• 100% avalanche tested

• 175°C Operating Temperature

• Lead Free and Green Devices Available (RoHS Compliant)

TO220S

Applications

• Switching Application Systems

• Inverter Systems

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±25

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

320

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

120

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_JC

R_JA

1.25

62.5

°C/W

Drain-Source Avalanche Ratings

③

E_AS

Avalanche Energy, Single Pulsed

225

Ruichips Semiconductor Co., Ltd

Rev. B– AUG., 2015

www.ruichips.com

12 3 4 5 6 7 8

下载PDF

与RU6888R3相关器件

型号	品牌	描述	获取价格	数据表
RU6888S	RUICHIPS	TO-263	获取价格
RU6H10P	RUICHIPS	N-Channel Advanced Power MOSFET	获取价格
RU6H10R	RUICHIPS	N-Channel Advanced Power MOSFET	获取价格
RU6H11R	RUICHIPS	N-Channel Advanced Power MOSFET	获取价格
RU6H2R	RUICHIPS	N-Channel Advanced Power MOSFET	获取价格
RU6H7R	RUICHIPS	N-Channel Advanced Power MOSFET	获取价格