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CMS17 PDF预览

CMS17

更新时间: 2024-01-04 14:35:33
品牌 Logo 应用领域
东芝 - TOSHIBA 整流二极管开关光电二极管
页数 文件大小 规格书
5页 189K
描述
Switching Mode Power Supply Applications

CMS17 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:3-4E1A, M-FLAT, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.54Is Samacsys:N
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.48 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:30 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CMS17 数据手册

 浏览型号CMS17的Datasheet PDF文件第2页浏览型号CMS17的Datasheet PDF文件第3页浏览型号CMS17的Datasheet PDF文件第4页浏览型号CMS17的Datasheet PDF文件第5页 
CMS17  
TOSHIBA Schottky Barrier Diode  
CMS17  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
= 0.48 V (max)  
FM  
= 2.0 A  
F (AV)  
= 30 V  
RRM  
Suitable for compact assembly due to a small surface-mount package:  
TM  
“MFLAT ” (Toshiba package name)”  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
I
2.0 (Note 1)  
30 (50 Hz)  
40~150  
40~150  
F (AV)  
Nonrepetitive peak surge current  
Junction temperature  
I
A
FSM  
T
j
°C  
°C  
Storage temperature range  
T
stg  
Note 1: Ta = 77°C  
Device mounted on a ceramic board  
Board size: 50 mm × 50 mm  
Soldering size: 2 mm × 2 mm  
Board thickness: 0.64 t  
JEDEC  
JEITA  
TOSHIBA  
3-4E1A  
Rectangular waveform (α = 180°), V = 15 V  
R
Weight: 0.023 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= 1.0 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
I
I
0.42  
0.45  
0.8  
10  
0.48  
FM (1)  
FM (2)  
FM  
FM  
Peak forward voltage  
V
= 2.0 A (pulse test)  
I
V
V
V
= 5 V (pulse test)  
= 30 V (pulse test)  
RRM (1)  
RRM (2)  
RRM  
RRM  
Peak repetitive reverse current  
Junction capacitance  
μA  
I
100  
C
= 10 V, f = 1.0 MHz  
R
90  
pF  
j
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 t)  
60  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 t)  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
°C/W  
135  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 2.1 mm × 1.4 mm)  
(board thickness: 1.6 t)  
210  
16  
Thermal resistance  
(junction to lead)  
R
th (j-)  
°C/W  
1
2006-11-13  

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