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CMS17(TE12L,Q) PDF预览

CMS17(TE12L,Q)

更新时间: 2024-01-04 05:40:48
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 167K
描述
DIODE SCHOTTKY 30V 2A M-FLAT

CMS17(TE12L,Q) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.73
Base Number Matches:1

CMS17(TE12L,Q) 数据手册

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CMS17  
TOSHIBA Schottky Barrier Diode  
CMS17  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
= 0.48 V (max)  
FM  
= 2.0 A  
F (AV)  
= 30 V  
RRM  
Suitable for compact assembly due to a small surface-mount package:  
TM  
“MFLAT ” (Toshiba package name)”  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
I
2.0 (Note 1)  
30 (50 Hz)  
40~150  
40~150  
F (AV)  
Nonrepetitive peak surge current  
Junction temperature  
I
A
FSM  
T
j
°C  
°C  
Storage temperature range  
T
stg  
Note 1: Ta = 77°C  
Device mounted on a ceramic board  
Board size: 50 mm × 50 mm  
Soldering size: 2 mm × 2 mm  
Board thickness: 0.64 t  
JEDEC  
JEITA  
TOSHIBA  
3-4E1A  
Rectangular waveform (α = 180°), V = 15 V  
R
Weight: 0.023 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= 1.0 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
I
I
0.42  
0.45  
0.8  
10  
0.48  
FM (1)  
FM (2)  
FM  
FM  
Peak forward voltage  
V
= 2.0 A (pulse test)  
I
V
V
V
= 5 V (pulse test)  
= 30 V (pulse test)  
RRM (1)  
RRM (2)  
RRM  
RRM  
Peak repetitive reverse current  
Junction capacitance  
μA  
I
100  
C
= 10 V, f = 1.0 MHz  
R
90  
pF  
j
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 t)  
60  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 t)  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
°C/W  
135  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 2.1 mm × 1.4 mm)  
(board thickness: 1.6 t)  
210  
16  
Thermal resistance  
(junction to lead)  
R
th (j-)  
°C/W  
1
2006-11-13  

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