Datasheet > CHA3218-99F_15

CHA3218-99F_15

更新时间： 2022-02-26 13:40:41

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
10页	421K
描述
2-18GHz Low Noise Amplifier

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CHA3218-99F_15 数据手册

CHA3218-99F

RoHS COMPLIANT

2-18GHz Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA3218-99F is a two stage very wide

band Low Noise Amplifier.

Vg1

Vg2

Vd1

Vd2

The wide frequency band associated to a 2dB

low noise figure makes this circuit very

versatile for very high performance systems.

It is designed for a wide range of applications,

from military to commercial communication

systems.

OUT

The circuit is manufactured with a pHEMT

process, 0.15µm gate length, via holes

through the substrate, air bridges and electron

beam gate lithography.

It is available in chip form.

Main Features

■ Broadband performances: 2-18GHz

■ Noise figure : 2dB

■ Output power: 15dBm @ 1dBcomp

■ Linear gain: 24dB

■ High linearity: 25dBm

■ Quiescent bias point: Vd=4V, Id=120mA

■ Chip size 3.07x1.57x0.1mm

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Gain

Parameter

Min

Typ

Max

Unit

GHz

Frequency range

Linear Gain

Noise Figure

Pout

Output Power @1dB comp.

dBm

Ref. : DSCHA32181157 - 06 Jun 11

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - BP46 - 91401 Orsay Cedex France

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

12 3 4 5 6 7...10

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