Datasheet > CHA3656-QAG_15

CHA3656-QAG_15

更新时间： 2022-02-26 13:40:41

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
14页	578K
描述
5.8-17GHz Low Noise Amplifier

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CHA3656-QAG_15 数据手册

CHA3656-QAG

5.8-17GHz Low Noise Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA3656-QAG is a two-stage self-

biased wide band monolithic low noise

amplifier.

UMS

A3656

It is designed for

wide range of

applications, from military to commercial

communication systems.

YYWW

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography.

It is supplied in RoHS compliant SMD

package.

Gain & Noise figure (dB)

Main Features

■ Broadband performances: 5.8- 17GHz

■ 1.7dB noise figure

■ 24dBm 3^rdorder intercept point

■ 14dBm power at 1dB compression

■ 20dB gain

Gain

■ Low DC power consumption

■ 16L-QFN3X3 SMD package

Frequency (GHz)

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Parameter

Min

5.8

Typ

Max

Unit

GHz

Frequency range

Linear Gain

17.0

Gain

20.0

1.7

Noise Figure

P1dB

Output Power @1dB comp.

13.0

14.0

dBm

Ref. : DSCHA3656-QAG3156 - 05 Jun 13

1/14

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

12 3 4 5 6 7...14

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