Datasheet > W3H264M16E-400B2C

W3H264M16E-400B2C

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
玛居礼 - MERCURY		动态存储器双倍数据速率
页数	文件大小	规格书
28页	1278K
描述
DDR DRAM, 128MX16, 0.8ns, CMOS, PBGA79, BGA-79

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W3H264M16E-400B2C 数据手册

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W3H264M16E-XB2X

*PRELIMINARY

256MB – 2 x 64M x 16 DDR2 SDRAM 79 PBGA

FEATURES

BENEFITS

 Data rate = 400, 533 and 667 Mb/s

 Larger ball pitch for higher reliability

 Package:

 Footprint compatible with W3H64M16E

• 79 Plastic Ball Grid Array (PBGA), 11 x 14mm

• 1.27mm pitch

* This product is under development, is not qualiﬁed or characterized and is subject to change

without notice.

• Moisture Sensitivity Level (MSL): 3

 Supply Voltage = 1.8V

 Differential data strobe (DQS, DQS#) per byte

 Internal, pipelined, double data rate architecture

 4-bit prefetch architecture

TYPICAL APPLICATION

 DLL for alignment of DQ and DQS transitions with clock

signal

 Eight internal banks for concurrent operation

 Programmable Burst lengths: 4 or 8

RAM

 Auto Refresh and Self Refresh Modes

 On Die Termination (ODT)

DDR2/DDR3

W3H264M16E-XBI

Host

FPGA/

 Adjustable data – output drive strength

 Programmable CAS latency: 3, 4, 5, 6, or 7

 Posted CAS additive latency: 0, 1, 2, 3, 4, 5, or 6

 Write latency = Read latency – 1* t_CK

 Commercial, Industrial and Military Temperature Ranges

 Organized as 2 ranks of 64M x 16

Processor

SSD (SLC)

MSM32/MSM64 (SATA BGA)

W7N16GVHxxBI (PATA BGA)

M512/M256/M128 (SATA, 2.5in)

 Weight: W3H264M16E-XB2X – TBD

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 1

Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

12 3 4 5 6 7...28

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