VS-3C05ET12S2L-M3
www.vishay.com
Vishay Semiconductors
1200 V Gen 3 Power SiC Merged PIN Schottky Diode, 5 A
FEATURES
Base
• Majority carrier diode using Schottky technology
on SiC wide band gap material
cathode
4
4
• High CTI molding compound provides excellent
electrical insulation at relevant working voltages
• Improved VF and efficiency by thin wafer
technology
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
• 175 °C maximum operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• MPS structure for high ruggedness to forward current
surge events
• Meets JESD 201 class 1A whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
1
N/C
Anode
D2PAK 2L (TO-263AB 2L)
LINKS TO ADDITIONAL RESOURCES
3
D
3D Models
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
Wide band gap SiC based 1200 V Schottky diode, designed
for high performance and ruggedness.
IF
5 A
Optimum choice for high speed hard switching and efficient
operation over a wide temperature range, it is also
recommended for all applications suffering from Silicon
ultrafast recovery behavior.
Typical applications include AC/DC PFC and DC/DC ultra
high frequency output rectification in FBPS and LLC
converters.
VR
1200 V
1.35 V
175 °C
3 μA
VF at IF at 25 °C, typ.
TJ max.
I
R at VR at 175 °C
Q
C (VR = 800 V)
28 nC
Package
D2PAK 2L (TO-263AB 2L)
MECHANICAL DATA
Case: D2PAK 2L (TO-263AB 2L)
Circuit configuration
Single
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
1200
V
(1)
IF
TC = 152 °C (DC)
Continuous forward current
5
A
V
(2)
IF
TC = 157 °C (DC)
DC blocking voltage
VDC
1200
27
Repetitive peak forward current
IFRM
TC = 25 °C, f = 50 Hz, square wave, DC = 25 %
TC = 25 °C, tp = 10 ms, half sine wave
TC = 110 °C, tp = 10 ms, half sine wave
TC = 25 °C
42
A
Non-repetitive peak forward surge current
Power dissipation
IFSM
39
60
(1)
Ptot
W
W
T
C = 110 °C
26
TC = 25 °C
79
(2)
Ptot
T
T
C = 110 °C
C = 25 °C
34
8.7
I2t value
i2dt
A2s
°C
T
C = 110 °C
7.6
Operating junction and storage temperatures TJ (3), TStg
-55 to +175
Notes
(1)
(2)
(3)
Based on maximum Rth
Based on typical Rth
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Revision: 10-Jan-2024
Document Number: 97175
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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