U12C20C thru U12C60C
Pb
U12C20C/U12C40C/U12C60C
Pb Free Plating Product
12.0 Ampere Dual Common Cathode Ultra Fast Recovery Rectifiers
TO-220AB(TO-220-3L)
Unit:inch(mm)
Features
※ Fast switching for high efficiency
※ Low forward voltage drop
※ High current capability
※ Low reverse leakage current
※ High surge current capability
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.038(0.96)
.025(0.65)MAX
.019(0.50)
Mechanical Data
※ Case: Heatsink TO-220AB
.1(2.54)
.1(2.54)
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
Case
Case
Case
Case
※ Weight: 2.0 gram approximately
Doubler
Series
Negative
Positive
Tandem Polarity
Suffix "D"
Tandem Polarity
Suffix "S"
Common Cathode
Suffix "C"
Common Anode
Suffix "A"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
U12C20C
U12C20A
U12C20D
U12C20S
U12C40C
U12C60C
U12C40A
U12C40D
U12C40S
U12C60A
U12C60D
U12C60S
PARAMETER
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current Tc=100°C
12.0
100
1.3
IF(AV)
IFSM
VF
A
A
V
(Total Device 2x6.0A=12.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Instantaneous Forward Voltage
@6.0A
0.98
1.7
(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25°C
At Rated DC Blocking Voltage @TJ=125°C
5.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
35
65
Trr
CJ
nS
pF
1.5
RθJC
°C/W
Operating Junction and Storage
Temperature Range
-55 to +150
TJ,TSTG
°C
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.