Datasheet > TC2696P1519

TC2696P1519

更新时间： 2024-02-19 00:19:44

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
2页	51K
描述
RF Power Field-Effect Transistor

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TC2696P1519 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
Is Samacsys：	N	Base Number Matches：	1

TC2696P1519 数据手册

TC2696

REV4_20070507

2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

FEATURES

PHOTO ENLARGEMENT

• 2 W Typical Output Power at 6 GHz

• 10 dB Typical Linear Power Gain at 6 GHz

• High Linearity: IP3 = 43 dBm Typical at 6 GHz

• High Power Added Efficiency:

Nominal PAE of 43 % at 6 GHz

• Suitable for High Reliability Application

• Breakdown Voltage: BV_DGO≥ 18 V

• Lg = 0.6 µm, Wg = 5 mm

• Tight Vp ranges control

• High RF input power handling capability

• 100 % DC Tested

• Flange Ceramic Package

DESCRIPTION

The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor

(PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high

dynamic range power amplifiers for commercial and military high performance power applications.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

MIN

TYP

MAX UNIT

Symbol

P_1dBOutput Power at 1dB Gain Compression Point, f = 6 GHz V_DS= 8 V, I_DS= 500 mA

G_LLinear Power Gain, f = 6 GHz V_DS= 8 V, I_DS= 500 mA

CONDITIONS

32.5

dBm

IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz V_DS= 8 V, I_DS= 500 mA, *P_SCL= 20 dBm

dBm

PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz

1.25

850

-1.7**

I_DSSSaturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

g_m

V_P

Transconductance at V_DS= 2 V, V_GS= 0 V

Pinch-off Voltage at V_DS= 2 V, I_D= 10 mA

Volts

BV_DGODrain-Gate Breakdown Voltage at I_DGO=2.5 mA

R_thThermal Resistance

Note: * P_SCL: Output Power of Single Carrier Level.

C/W

** For the tight control of the pinch-off voltage range, we divide TC2696 into 3 model numbers to fit customer design requirement

(1)TC2696P1519 : Vp = -1.5V to -1.9V (2)TC2696P1620 : Vp = -1.6V to -2.0V (3)TC2696P1721 : Vp = -1.7V to -2.1V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P1/2

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