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TC2282P0912 PDF预览

TC2282P0912

更新时间: 2024-02-12 21:08:10
品牌 Logo 应用领域
全讯科技 - TRANSCOM /
页数 文件大小 规格书
3页 221K
描述
RF Small Signal Field-Effect Transistor

TC2282P0912 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.7
Base Number Matches:1

TC2282P0912 数据手册

 浏览型号TC2282P0912的Datasheet PDF文件第2页浏览型号TC2282P0912的Datasheet PDF文件第3页 
TC2282  
REV3_20070504  
Low Noise Ceramic Packaged PHEMT GaAs FETs  
PHOTO ENLARGEMENT  
FEATURES  
0.5 dB Typical Noise Figure at 12 GHz  
High Associated Gain: Ga = 12 dB Typical at 12 GHz  
Lg = 0.25 µm, Wg = 300 µm  
Tight Vp ranges control  
High RF input power handling capability  
100 % DC Tested  
Micro-X Metal Ceramic Package  
DESCRIPTION  
The TC2282 is a high performance field effect transistor housed in a ceramic micro-x package with TC1202  
PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device  
suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.  
ELECTRICAL SPECIFICATIONS (TA=25 °C)  
Symbol  
CONDITIONS  
Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz  
Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz  
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V  
Transconductance at VDS = 2 V, VGS = 0 V  
Pinch-off Voltage at VDS = 2 V, ID = 0.6mA  
Drain-Gate Breakdown Voltage at IDGO = 0.15mA  
Thermal Resistance  
MIN  
TYP  
0.5  
12  
MAX  
UNIT  
dB  
dB  
mA  
mS  
Volts  
Volts  
°C/W  
NF  
Ga  
IDSS  
gm  
VP  
BVDGO  
Rth  
0.7  
11  
90  
100  
-1.0*  
9
5
150  
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)  
TYPICAL NOISE PARAMETERS (TA=25 °C)  
VDS = 4 V, IDS = 25 mA  
Frequency  
NFopt  
GA  
Γopt  
Rn/50  
Symbol  
VDS  
VGS  
IDS  
IGS  
Pin  
PT  
TCH  
TSTG  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Rating  
5.0 V  
-3.0 V  
IDSS  
300 µA  
20 dBm  
400 mW  
175 °C  
MAG  
0.76  
0.67  
0.60  
0.55  
0.50  
0.46  
0.43  
0.40  
0.37  
ANG  
40  
2
4
0.33  
0.37  
0.41  
0.46  
0.52  
0.56  
0.68  
0.80  
0.98  
26.0  
20.1  
16.7  
14.3  
12.7  
11.7  
11.1  
10.9  
10.8  
0.38  
0.31  
0.24  
0.20  
0.16  
0.14  
0.14  
0.14  
0.16  
78  
6
8
110  
136  
162  
188  
-143  
-109  
-67  
Gate Current  
RF Input Power, CW  
Continuous Dissipation  
Channel Temperature  
Storage Temperature  
10  
12  
14  
16  
18  
- 65 °C to +175 °C  
* For the tight control of the pinch-off voltage range, we divide TC2282 into 3 model numbers to fit customer design requirement  
(1)TC2282P0710 : Vp = -0.7V to -1.0V (2)TC2282P0811 : Vp = -0.8V to -1.1V (3)TC2282P0912 : Vp = -0.9V to -1.2V  
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.  
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.  
Web-Site: www.transcominc.com.tw  
Phone: 886-6-5050086  
P 1 / 3  
Fax: 886-6-5051602  

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