Datasheet > TC1501P1620

TC1501P1620

更新时间： 2024-01-12 01:40:21

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
5页	176K
描述
RF Power Field-Effect Transistor

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TC1501P1620 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

TC1501P1620 数据手册

TC1501

REV5_20070502

1W High Linearity and High Efficiency GaAs Power FETs

FEATURES

ꢀ1W Typical Power at 6 GHz

PHOTO ENLARGEMENT

ꢀLinear Power Gain: G_L= 13 dB Typical at 6 GHz

ꢀHigh Linearity: IP3 = 40 dBm Typical at 6 GHz

ꢀHigh Power Added Efficiency: Nominal PAE of 43% at 6 GHz

ꢀVia Hole Source Ground

ꢀSuitable for High Reliability Application

ꢀBreakdown Voltage: BV_DGO≥ 15 V

ꢀLg = 0.35 µm, Wg = 2.4 mm

ꢀTight Vp ranges control

ꢀHigh RF input power handling capability

ꢀ100 % DC Tested

DESCRIPTION

The TC1501 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and

high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low

thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 20GHz.

All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either

thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn

die-attach. Typical application include commercial and military high performance power amplifiers.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

MIN

29.5

TYP MAX UNIT

Symbol

Conditions

dBm

P_1dBOutput Power at 1dB Gain Compression Point , f = 6 GHz V_DS= 8 V, I_DS= 240 mA

G_L

Linear Power Gain, f = 6 GHz V_DS= 8 V, I_DS= 240 mA

Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz V_DS= 8 V, I_DS= 240 mA,*P_SCL= 17 dBm

dBm

IP3

PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz

600

400

-1.7**

I_DSSSaturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

g_m

V_P

Transconductance at V_DS= 2 V, V_GS= 0 V

Pinch-off Voltage at V_DS= 2 V, I_D= 4.8 mA

Volts

°C/W

BV_DGODrain-Gate Breakdown Voltage at I_DGO=1.2 mA

R_th

Thermal Resistance

Note:

* P_SCL: Output Power of Single Carrier Level.

* *For the tight control of the pinch-off voltage . TC1501’s are divided into 3 groups:

(1)TC1501P1519 : Vp = -1.5V to -1.9V (2) TC1501P1620 : Vp = -1.6V to -2.0V

(3)TC1501P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

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Fax: 886-6-5051602

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