TBN4227 Series
Semiconductor
Si NPN Transistor
Unit in mm
SOT-323
□ Applications
2.1±0.1
1.25±0.05
- VHF and UHF low noise amplifier
- Wide band amplifier
1
3
□ Features
2
- High gain bandwidth product
fT = 8 GHz at VCE = 3 V, IC = 7 mA
fT = 9 GHz at VCE = 3 V, IC = 20 mA
- High power gain
|S21|2 = 11.4 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz
- Low noise figure
0.1 Min.
NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz
Pin Configuration
1. Base
2. Emitter
3. Collector
□ Absolute Maximum Ratings (TA = 25 ℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
BVCBO
BVCEO
BVEBO
IC
Ratings
Unit
20
V
V
V
8
3
65
mA
mW
℃
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Ptot
150
150
Tj
Tstg
-65 ~ 150
℃
Caution : Electro Static Discharge sensitive device
1