Datasheet > T0800TB45E

T0800TB45E

更新时间： 2024-04-18 10:34:07

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力特 - LITTELFUSE		双极性晶体管
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T0800TB45E 数据手册

Date:- 14 July, 2011

Data Sheet Issue:- P1

WESTCODE

An IXYS Company

Prospective Data

Insulated Gate Bi-Polar Transistor

Type T0800TB45E

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_CES

Collector – emitter voltage

4500

2800

±20

V_{DC link}

V_GES

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

MAXIMUM

LIMITS

RATINGS

UNITS

I_C(DC)

I_CRM

I_ECO

P_MAX

(di/dt)_cr

T_j

DC collector current, IGBT

800

Repetitive peak collector current, t_p=1ms, IGBT

Maximum reverse emitter current, t_p=100µs, (note 2 & 3)

Maximum power dissipation, IGBT (Note 2)

Critical diode di/dt (note 3)

1600

800

6.4

A/µs

°C

1500

Operating temperature range.

-40 to +125

T_stg

Storage temperature range.

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) The use of an anti-parallel diode is recommended.

Tentative Data Sheet T0800TB45E Issue P1

Page 1 of 6

July, 2011

12 3 4 5 6 7

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