Datasheet > SQJ112EP

SQJ112EP

更新时间： 2024-04-09 19:02:06

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	229K
描述
Automotive N-Channel 100 V (D-S) 175 °C MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SQJ112EP 数据手册

SQJ112EP

Vishay Siliconix

www.vishay.com

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

PowerPAK^®SO-8L

• AEC-Q101 qualified

• 100 % R_gand UIS tested

• Q_gd/Q_gsratio < 1 optimizes switching

characteristics

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

100

0.0077

R_DS(on)() at V_GS= 10 V

_D(A) ^e

Configuration

Package

Single

N-Channel MOSFET

PowerPAK SO-8L

ORDERING INFORMATION

Package

PowerPAK SO-8L

SQJ112EP

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79776)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

100

V_GS

T_C= 25 °C

Continuous drain current ^e

I_D

_C= 125 °C

Continuous source current (diode conduction) ^e

Pulsed drain current ^{a, e}

I_S

168

I_DM

I_AS

224

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

E_AS

T_C= 25 °C

185

Maximum power dissipation ^{c, e}

P_D

T_C= 125 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

-55 to +175

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

Junction-to-case (drain) ^d

PCB mount^b

°C/W

R_thJC

0.81

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. When mounted on 1" square PCB (FR4 material)

c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom

side solder interconnection

d. As per JESD51-14

e. Values based on R_thJCand T_Cof 25 °C. Actual values achievable will be dependent on the thermal characteristics of the complete system

S24-0105-Rev. A, 05-Feb-2024

Document Number: 62192

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

下载PDF

与SQJ112EP相关器件

型号	品牌	描述	获取价格	数据表
SQJ114EP	VISHAY	Automotive N-Channel 100 V (D-S) 175 °C MOSFE	获取价格
SQJ116EP	VISHAY	Automotive N-Channel 100 V (D-S) 175 °C MOSFE	获取价格
SQJ118ELP	VISHAY	Automotive N-Channel 100 V (D-S) 175 °C MOSFE	获取价格
SQJ118EP	VISHAY	Automotive N-Channel 80 V (D-S) 175 °C MOSFET	获取价格
SQJ123ELP	VISHAY	Automotive P-Channel 12 V (D-S) 175 °C MOSFET	获取价格
SQJ126EP	VISHAY	Automotive N-Channel 30 V (D-S) 175 °C MOSFET	获取价格