SI4477DY-T1-GE3

更新时间： 2024-02-18 01:07:20

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威世 - VISHAY		/
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10页	261K
描述
P-Channel 20-V (D-S) MOSFET

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SI4477DY-T1-GE3 数据手册

Si4477DY

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

_D(A)^d

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

0.0062 at V_GS= - 4.5 V

0.0105 at V_GS= - 2.5 V

- 26.6

- 20.6

•

- 20

59 nC

100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

Adapter Switch

- Notebook

SO-8

- Game Station

Top View

Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 20

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

- 26.6

- 21.3

- 18^{a, b}

- 14.5^{a, b}

- 60

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

- 5.5

- 2.5^{a, b}

_C= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

6.6

4.2

3^{a, b}

P_D

Maximum Power Dissipation

1.95^{a, b}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, c}

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 80 °C/W.

d. Based on T_C= 25 °C.

Document Number: 64829

S09-0858-Rev. A, 18-May-09

www.vishay.com

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