Si3442BDV
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
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Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
4.2
Definition
0.057 at VGS = 4.5 V
0.090 at VGS = 2.5 V
•
•
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC
20
3.4
TSOP-6
Top View
(1, 2, 5, 6) D
1
2
3
6
5
3 mm
(3) G
4
2.85 mm
Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)
(4) S
Si3442BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
Marking Code:
2Bxxx
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
20
20
V
VGS
12
TA = 25 °C
TA = 70 °C
4.2
3.4
3.0
2.4
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
1.4
0.72
0.86
0.55
TA = 25 °C
TA = 70 °C
1.67
1.07
Maximum Power Dissipationa
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
75
Maximum
100
Unit
t ≤ 5 s
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
120
70
145
°C/W
RthJF
85
Note:
a. Surface Mounted on FR4 board, t ≤ 5 s.
Document Number: 72504
S09-2110-Rev. E, 12-Oct-09
www.vishay.com
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