5秒后页面跳转
SBB5000 PDF预览

SBB5000

更新时间: 2024-02-01 18:47:33
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波
页数 文件大小 规格书
6页 155K
描述
0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

SBB5000 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.69射频/微波设备类型:WIDE BAND LOW POWER
Base Number Matches:1

SBB5000 数据手册

 浏览型号SBB5000的Datasheet PDF文件第2页浏览型号SBB5000的Datasheet PDF文件第3页浏览型号SBB5000的Datasheet PDF文件第4页浏览型号SBB5000的Datasheet PDF文件第5页浏览型号SBB5000的Datasheet PDF文件第6页 
SBB5000  
0.05GHz to  
6GHz, Cascad-  
able Active  
Bias InGaP  
HBT MMIC  
Amplifier  
SBB5000  
0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS  
InGaP HBT MMIC AMPLIFIER  
Package: Bare Die  
Product Description  
Features  
RFMD’s SBB5000 is a high performance InGaP HBT MMIC amplifier utilizing a Dar-  
lington configuration with an active bias network. The active bias network provides  
stable current over temperature and process Beta variations. Its efficient operation  
from a single 5V supply and its compact size (0.59mmx0.70mm) make it ideal for  
high-density multi-chip module applications. It is well-suited for high linearity 5V  
gain block applications and it is internally matched to 50.  
OIP3=35dBm at 2000MHz  
=20.5dBm at 2000MHz  
P
1dB  
Single Fixed 5V Supply  
Compact Die Size  
(0.59mmx0.70mm)  
RFMD can provide 100% DC screening, visual inspection, and Hi-Rel water qualifi-  
cation. Die can be delivered at the wafer level or picked to gel  
Patented Thermal Design &  
Bias Circuit  
or waffle paks.  
Optimum Technology  
Matching® Applied  
Low Thermal Resistance  
Gain and Return Loss versus Frequency  
VS=5V, IS=75mA  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
30.0  
20.0  
10.0  
0.0  
Applications  
PA Driver Amplifier  
RF Pre-driver and RF Receive  
Path  
GSG Probe Data with Bias Tees  
ZS=ZL=50 Ohms, T=25°C  
Military Communications  
Test and Instrumentation  
-10.0  
-20.0  
-30.0  
-40.0  
GaAs pHEMT  
Si CMOS  
IRL  
Gain  
ORL  
Si BJT  
GaN HEMT  
RF MEMS  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Frequency (GHz)  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
50  
Max.  
6000  
Frequency of Operation  
Small Signal Gain  
MHz  
dB  
dB  
20.5  
20.5  
20.0  
21.0  
20.5  
17.0  
37.0  
35.0  
30.0  
15.0  
12.0  
75.0  
3.9  
Frequency=500MHz  
Frequency=2000Mhz  
Frequency=4000MHz  
Frequency=500MHz  
Frequency=2000MHz  
Frequency=4000MHz  
Frequency=500MHz  
Frequency=2000MHz  
Frequency=4000MHz  
Frequency=2000MHz  
Frequency=2000MHz  
dB  
Output Power at 1dB Compression  
Output IP3  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
dB  
mA  
dB  
Input Return Loss  
Output Return Loss  
Current  
Noise Figure  
Frequency=2000MHz  
Thermal Resistance  
69.9  
°C/W  
Junction to lead (89 pkg)  
Test Conditions: Z =50, V =5V, I =75mA, T=25°C, OIP3 Tone Spacing=1MHz, P /tone=0dBm. GSG Probe Data with Bias Tees.  
0
D
D
OUT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS111219  
1 of 6  

与SBB5000相关器件

型号 品牌 描述 获取价格 数据表
SBB-5000 RFMD 0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

获取价格

SBB5000S2 RFMD 0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

获取价格

SBB50051141-SA AMPHENOL Board Stacking Connector

获取价格

SBB50051241-SA AMPHENOL Board Stacking Connector

获取价格

SBB50052361-SA AMPHENOL Board Stacking Connector

获取价格

SBB50052501-SA AMPHENOL Board Stacking Connector

获取价格