搜索“双极性晶体管”:总计:500+个Datasheet相关器件
型号 | Logo | 品牌 | 价格 | 文档 | 应用 | 描述 |
CT300T180A18BW4-12PBF | INFINEON | 获取价格 | 双极性晶体管 | N-CHANNEL IGBT | ||
CPA135T91A18BA4-12PBF | INFINEON | 获取价格 | 双极性晶体管 | N-CHANNEL IGBT | ||
IRG5W50HF06A | INFINEON | 获取价格 | 双极性晶体管 | MOD IGBT 600V 50A POWIR 34 | ||
IRG5K200HF06B | INFINEON | 获取价格 | 双极性晶体管 | MOD IGBT 600V 200A POWIR 62 | ||
IRG7T200CH12B | INFINEON | 获取价格 | 双极性晶体管 | MOD IGBT 1200V 200A POWIR 62 | ||
IRGBC36PBF | INFINEON | 获取价格 | 局域网双极性晶体管 | 34A, 600V, N-CHANNEL IGBT, TO-220AB | ||
APT130GL60JN | MICROSEMI | 获取价格 | 双极性晶体管 | 130A, 600V, N-CHANNEL IGBT, ISOTOP-4 | ||
APT50GN60SDQ3 | MICROSEMI | 获取价格 | 栅双极性晶体管 | Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, D3PAK-3 | ||
APT50GN60SDQ3(G) | MICROSEMI | 获取价格 | 栅双极性晶体管 | Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3 | ||
CPA185T161A18BA4-12PBF | INFINEON | 获取价格 | 双极性晶体管 | N-CHANNEL IGBT | ||
F3L200R12W2H3_B11 | INFINEON | 获取价格 | 栅双极性晶体管 | Insulated Gate Bipolar Transistor, | ||
S5979 | TOSHIBA | 获取价格 | 栅双极性晶体管 | TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | ||
IRG4PC30KD-EPBF | INFINEON | 获取价格 | 局域网电动机控制瞄准线双极性晶体管 | 28A, 600V, N-CHANNEL IGBT, TO-247AD, TO-247AD, 3 PIN | ||
IRGPH30MPBF | INFINEON | 获取价格 | 局域网电动机控制双极性晶体管 | 15A, 1200V, N-CHANNEL IGBT, TO-247AC | ||
FGH40T120SMD_F155 | FAIRCHILD | 获取价格 | 栅双极性晶体管 | Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel | ||
BSM600GA120DLCS | ROCHESTER | 获取价格 | 局域网双极性晶体管 | IGBT, MODULE-5 | ||
CM15AD00-24H | MITSUBISHI | 获取价格 | 局域网栅双极性晶体管栅极 | Silicon Controlled Rectifier, 23.55A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element | ||
HGT1S12N60C3D | RENESAS | 获取价格 | 栅双极性晶体管 | TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA | ||
VVZB135-16IOXT | IXYS | 获取价格 | 局域网栅双极性晶体管栅极 | Silicon Controlled Rectifier, 1600V V(RRM), 3 Element, ROHS COMPLIANT MODULE-22 | ||
HGT1S7N60B3 | ROCHESTER | 获取价格 | 电动机控制瞄准线双极性晶体管开关 | 14A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3 | ||
SGW5N60RUFDTM | ROCHESTER | 获取价格 | 电动机控制栅瞄准线双极性晶体管开关 | 8A, 600V, N-CHANNEL IGBT, TO-263AB, D2PAK-3 | ||
5961-01-536-6695 | TOSHIBA | 获取价格 | 栅双极性晶体管 | TRANSISTOR TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,15A I(C),TO-247VAR, Insulated Gate BIP Tr | ||
FGPF45N45TTU | ROCHESTER | 获取价格 | 局域网电动机控制栅瞄准线双极性晶体管 | 45A, 450V, N-CHANNEL IGBT, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | ||
MIG10J855H | TOSHIBA | 获取价格 | 电动机控制栅双极性晶体管 | TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | ||
TDB6HK74N16RR | INFINEON | 获取价格 | 局域网栅双极性晶体管栅极 | Silicon Controlled Rectifier, 1600V V(RRM), 3 Element | ||
SGS6N60UFTU | ROCHESTER | 获取价格 | 局域网电动机控制瞄准线双极性晶体管开关 | 6A, 600V, N-CHANNEL IGBT, TO-220F, 3 PIN | ||
MIG10J503L | TOSHIBA | 获取价格 | 栅双极性晶体管 | TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,10A I(C) | ||
MIG10J805 | TOSHIBA | 获取价格 | 栅双极性晶体管 | TRANSISTOR IGBT, Insulated Gate BIP Transistor | ||
MIG15J805 | TOSHIBA | 获取价格 | 栅双极性晶体管 | TRANSISTOR IGBT, Insulated Gate BIP Transistor | ||
SKIIP81ANB15T1 | SEMIKRON | 获取价格 | 双极性晶体管二极管 | Bridge Rectifier Diode, 3 Phase, 100A, 1500V V(RRM), Silicon, CASE M8A, MINISKIIP-11 | ||
MIG10J504H | TOSHIBA | 获取价格 | 栅双极性晶体管 | TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,10A I(C) | ||
NGB8206NTF4 | ONSEMI | 获取价格 | 汽车点火双极性晶体管 | 20A, 390V, N-CHANNEL IGBT, CASE 418B-04, D2PAK-3 | ||
NGB8206NSL3G | ONSEMI | 获取价格 | 汽车点火双极性晶体管 | 20A, 390V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3 | ||
TPS65552ARGTT | TI | 获取价格 | 双极性晶体管 | Integrated Photo Flash Charger and IGBT Driver 16-QFN -35 to 85 | ||
BUK854-800A127 | NXP | 获取价格 | 局域网电动机控制栅双极性晶体管开关 | TRANSISTOR 12 A, 800 V, N-CHANNEL IGBT, TO-220AB, Insulated Gate BIP Transistor | ||
BUK854-800A,127 | NXP | 获取价格 | 局域网电动机控制双极性晶体管开关 | 12A, 800V, N-CHANNEL IGBT, TO-220AB | ||
GT8G103(SM) | TOSHIBA | 获取价格 | 栅双极性晶体管 | TRANSISTOR TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,8A I(C),TO-252AA, Insulated Gate BIP Trans | ||
GT8G103(2-7B6C) | TOSHIBA | 获取价格 | 栅双极性晶体管 | TRANSISTOR 8 A, 400 V, N-CHANNEL IGBT, 2-7B6C, 3 PIN, Insulated Gate BIP Transistor | ||
HGTP12N60C3DR | RENESAS | 获取价格 | 局域网电动机控制瞄准线双极性晶体管 | 24A, 600V, N-CHANNEL IGBT | ||
HGTG12N60C3DR | RENESAS | 获取价格 | 局域网电动机控制栅瞄准线双极性晶体管开关 | 24A, 600V, N-CHANNEL IGBT, TO-247 | ||
HGTP12N60C3R | RENESAS | 获取价格 | 局域网电动机控制栅瞄准线双极性晶体管 | 24A, 600V, N-CHANNEL IGBT, TO-220AB | ||
HGTP11N120CN96 | RENESAS | 获取价格 | 局域网LTE电动机控制瞄准线双极性晶体管 | 43A, 1200V, N-CHANNEL IGBT, TO-220AB ALTERNATE VERSION, 3 PIN | ||
HGTG30N60C3D_NL | ROCHESTER | 获取价格 | 局域网电动机控制瞄准线双极性晶体管 | 63A, 600V, N-CHANNEL IGBT, TO-247 | ||
HGT1S12N60C3RS | RENESAS | 获取价格 | 电动机控制栅瞄准线双极性晶体管 | 24A, 600V, N-CHANNEL IGBT, TO-263AB | ||
FGA25N120ANTDTU_F109 | FAIRCHILD | 获取价格 | 栅双极性晶体管 | 1200V, 25A, NPT Trench IGBT, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL | ||
CM10AD00-24H | MITSUBISHI | 获取价格 | 局域网栅双极性晶体管栅极 | Silicon Controlled Rectifier, 15.7A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element | ||
SKDH146/08-L200 | SEMIKRON | 获取价格 | 局域网栅双极性晶体管栅极 | Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 3 Element, CASE G69, SEMIPONT-28 | ||
SHDG1006 | SENSITRON | 获取价格 | 局域网栅双极性晶体管 | 20A, 1000V, N-CHANNEL IGBT, TO-258AA, TO-258, 3 PIN | ||
SHDG1005 | SENSITRON | 获取价格 | 局域网栅双极性晶体管 | 75A, 600V, N-CHANNEL IGBT, TO-258AA, TO-258, 3 PIN | ||
SHDG1011 | SENSITRON | 获取价格 | 局域网栅双极性晶体管 | 70A, 1200V, N-CHANNEL IGBT, TO-258AA, TO-258, 3 PIN | ||