Datasheet > RU40231Q2

RU40231Q2

更新时间： 2024-04-09 19:03:09

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	298K
描述
TP-3P

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RU40231Q2 数据手册

RU40231Q2

N-Channel Advanced Power MOSFET

Features

Pin Description

• 40V/230A,

DS (ON) =2.3mΩ(Typ.)@VGS=10V

DS (ON) =3.5mΩ(Typ.)@VGS=4.5V

• Super High Dense Cell Design

• Ultra Low On-Resistance

• 100% avalanche tested

• Lead Free and Green Devices Available

(RoHS Compliant)

TO-3P

Applications

• DC-DC Converters and Off-line UPS

• Switching Applications

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

±20

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

Storage Temperature Range

T_STG

-55 to 175

①

230

I_S

Diode Continuous Forward Current

T_C=25°C

Mounted on Large Heat Sink

②

920

I_DP

300μs Pulse Drain Current Tested

①

230

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

I_D

Continuous Drain Current(V_GS=10V)

164

394

P_D

Maximum Power Dissipation

197

0.38

R_qJC

Thermal Resistance-Junction to Case

°C/W

Drain-Source Avalanche Ratings

③

576

Avalanche Energy, Single Pulsed

E_AS

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– OCT., 2012

www.ruichips.com

12 3 4 5 6 7...9

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