Datasheet > RU30J41M

RU30J41M

更新时间： 2024-04-09 19:03:25

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
11页	440K
描述
DFN5060

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RU30J41M 数据手册

RU30J41M

Dual N-Channel Advanced Power MOSFET

Features

Pin Description

•

Channel 1

30V/30A,

R_{DS (ON)}=7mΩ(Typ.) @ V_GS=10V

R_{DS (ON)}=9.5mΩ(Typ.) @ V_GS=4.5V

• Channel 2

30V/40A,

R_{DS (ON)}=4mΩ (Typ.) @ V_GS=10V

R_{DS (ON)}=5.5mΩ (Typ.) @ V_GS=4.5V

• Fast Switching Speed

• 100% avalanche tested

• Lead Free and Green Devices Available (RoHS Compliant)

PIN1

PDFN5*6

Applications

• Switching Application Systems

• DC/DC Converters

Dual N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Channel 1 Channel 2 Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

±20

150

±20

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

°C

T_STG

I_S

-55 to 150 -55 to 150

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

120

160

I_DP

Continuous Drain Current@T_C(V_GS=10V)

②

I_D

③

Continuous Drain Current@T_A(V_GS=10V)

Maximum Power Dissipation@T_C

12.5

4.2

2.7

P_D

4.2

2.7

③

Maximum Power Dissipation@T_A

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2017

www.ruichips.com

12 3 4 5 6 7...11

下载PDF

与RU30J41M相关器件

型号	品牌	描述	获取价格	数据表
RU30L15H	RUICHIPS	P-Channel Advanced Power MOSFET	获取价格
RU30L18H	RUICHIPS	SOP-8	获取价格
RU30L30M	RUICHIPS	DFN3333	获取价格
RU30P3B	RUICHIPS	SOT23	获取价格
RU30P4B	RUICHIPS	SOT23	获取价格
RU30P4C	RUICHIPS	SOT23-3	获取价格