RU20P7C6
P-Channel Advanced Power MOSFET
Features
Pin Description
• -20V/-5A,
RDS (ON) =20mΩ(Typ.)@VGS=-4.5V
S
RDS (ON) =30mΩ(Typ.)@VGS=-2.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
D
D
G
• Lead Free and Green Devices Available (RoHS Compliant)
D
D
SOT23-6
D
Applications
• Load Switch
• Power Management
• Battery Protection
G
S
P-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
-20
±10
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
TSTG
IS
-55 to 150
-1
TA=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
-20
-5
A
A
IDP
②
Continuous Drain Current(VGS=-10V)
Maximum Power Dissipation
ID
-3.1
1.3
0.8
-
PD
RJC
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
°C/W
°C/W
③
100
RJA
Drain-Source Avalanche Ratings
④
EAS
Avalanche Energy, Single Pulsed
TBD
mJ
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2017
1
www.ruichips.com