Datasheet > RU1H31L

RU1H31L

更新时间： 2024-04-09 19:03:05

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
6页	1206K
描述
TO252

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数据手册

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RU1H31L 数据手册

RU1H31L

N-Channel Advanced Power MOSFET

Features

Pin Description

• 100V/30A,

R_{DS (ON)}=29mΩ(Typ.)@V_GS=10V

R_{DS (ON)}=33mΩ(Typ.)@V_GS=4.5V

• Super High Dense Cell Design

• 100% avalanche tested

• Lead Free and Green Devices Available (RoHS Compliant)

TO252

Applications

• High Speed Power Switching

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

100

±25

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

120

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

2.2

100

°C/W

R_qJC

R_q_JA

Drain-Source Avalanche Ratings

③

Avalanche Energy, Single Pulsed

E_AS

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– SEPT., 2019

www.ruichips.com

12 3 4 5 6

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