Preliminary Datasheet
RJH60T04DPQ-A1
R07DS1191EJ0200
Rev.2.00
600V - 30A - IGBT
Application:Current resonance circuit
Apr 02, 2014
Features
•
•
Optimized for current resonance application
Low collector to emitter saturation voltage
V
CE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
•
•
•
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 30 A, Rg = 10 Ω, Ta = 25°C, Inductive load)
•
Low tail loss
Etail = 160 μJ typ. (at VCC = 300 V, VGE = 20 V, IC = 50 A, Rg = 15 Ω, Tc = 125°C, current resonance circuit)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1
2
3
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
VCES
Ratings
Unit
V
600
30
VGES
V
Note1
Collector current
Tc = 25 °C
IC
60
A
Note1
Tc = 100 °C
IC
30
A
Collector peak current
IC(peak) Note1
IDF(peak) Note2
180
A
Collector to emitter diode forward peak current
Collector dissipation
80
A
PC
θj-c
θj-cd
Tj
208.3
0.6
W
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
°C/W
°C/W
°C
°C
2.1
150
Storage temperature
Tstg
–55 to +150
Notes: 1. Pulse width limited by safe operating area.
2. PW ≤ 5 μs, duty cycle ≤ 1%
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
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