NTE123AP
Silicon NPN Transistor
Audio Amplifier, Switch
(Compl to NTE159)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction to Case, Rθ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
JC
Thermal Resistance, Junction to Ambient, Rθ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W
JA
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
I = 1mA, I = 0, Note 1
40
60
6
–
–
–
–
–
–
–
V
V
(BR)CEO
(BR)CBO
(BR)EBO
C
B
V
V
I = 0.1mA, I = 0
C E
I = 0.1mA, I = 0
–
V
E
C
I
V
= 35V, V
= 0.4V
= 0.4V
–
0.1
0.1
µA
µA
CEV
CE
CE
EB(off)
EB(off)
Base Cutoff Current
I
V
= 35V, V
–
BEV
ON Characteristics (Note 1)
DC Current Gain
h
FE
V
CE
V
CE
V
CE
V
CE
V
CE
= 1V, I = 0.1mA
20
40
–
–
–
–
–
–
–
C
= 1V, I = 1mA
C
= 1V, I = 10mA
80
–
C
= 1V, I = 150mA
100
40
300
–
C
= 1V, I = 500mA
C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.