生命周期: | Transferred | 零件包装代码: | TO-252AA |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.32 |
雪崩能效等级(Eas): | 25 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 15 A | 最大漏源导通电阻: | 0.06 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 45 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | PURE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NP15P04SLG-E1-AYNote | RENESAS | SWITCHING P-CHANNEL POWER MOSFET |
获取价格 |
|
NP15P04SLG-E2-AY | NEC | Power Field-Effect Transistor, 15A I(D), 40V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta |
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|
NP15P04SLG-E2-AYNote | RENESAS | SWITCHING P-CHANNEL POWER MOSFET |
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|
NP15P06SLG | RENESAS | MOS FIELD EFFECT TRANSISTOR |
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|
NP15P06SLG_15 | RENESAS | SWITCHING P-CHANNEL POWER MOS FET |
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|
NP15P06SLG-E1-AY | NEC | Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Met |
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