Datasheet > NE85633R-T1B-A

NE85633R-T1B-A

更新时间： 2024-01-10 07:03:19

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
8页	767K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3

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NE85633R-T1B-A 数据手册

NPN SILICON RF TRANSISTOR

NE85633 / 2SC3356

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

3-PIN MINIMOLD

FEATURES

•

Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

• 8 mm wide embossed taping

NE85633-A

50 pcs (Non reel)

2SC3356

NE85633-T1B-A

2SC3356-T1B

3 kpcs/reel

• Pin 3 (Collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.0

100

C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

200

150

Tstg

65 to +150

Note Free air

Document No. PU10209EJ02V0DS (2nd edition)

Date Published June 2004 CP(K)

The mark  shows major revised points.

12 3 4 5 6 7 8

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