HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
•
Super low noise figure and high associated gain
NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA
Flat-lead 4-pin thin-type super minimold (M04) package
•
APPLICATIONS
•
•
•
Satellite radio (SDARS, DMB, etc.) antenna LNA
GPS antenna LNA
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3509M04
Order Number
NE3509M04-A
Package
Quantity
Marking
V80
Supplying Form
Flat-lead 4-pin thin- 50 pcs (Non reel)
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
type super minimold
NE3509M04-T2 NE3509M04-T2-A
3 kpcs/reel
(M04) (Pb-Free)
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3509M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
4.0
Unit
V
−3.0
V
IDSS
mA
µA
mW
°C
Gate Current
IG
200
Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Ptot
150
Tch
+150
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10608EJ01V0DS (1st edition)
Date Published April 2006 NS CP(K)