Datasheet > MTC40F204WS1RC48B

MTC40F204WS1RC48B

更新时间： 2024-04-09 19:02:39

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
11页	432K
描述
MTC40F204WS1RC – 96GB – 24Gb Die Revision B

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MTC40F204WS1RC48B 数据手册

浏览型号MTC40F204WS1RC48B的Datasheet PDF文件第2页

浏览型号MTC40F204WS1RC48B的Datasheet PDF文件第3页

浏览型号MTC40F204WS1RC48B的Datasheet PDF文件第4页

浏览型号MTC40F204WS1RC48B的Datasheet PDF文件第5页

浏览型号MTC40F204WS1RC48B的Datasheet PDF文件第6页

浏览型号MTC40F204WS1RC48B的Datasheet PDF文件第7页

96GB (x80, ECC, DR) 288-Pin DDR5 RDIMM

Features

DDR5 SDRAM RDIMM Addendum

MTC40F204WS1RC – 96GB

24Gb Die Revision B

Figure 1: 288-Pin DDR5 RDIMM (R/C-A0)

Features

Information provided here is in addition to or super-

sedes information provided in the Micron DDR5

RDIMM Core data sheet.

U10

U23

• DDR5 functionality and operations supported as

U11

U13 U14 U15 U16

U17

U18 U19 U20 U21

defined in the component data sheet

U22

U12

• Features and specifications defined in the Micron

DDR5 RDIMM core data sheet

Sensitive parts:

Primary side

U29

• 288-pin, DDR5 registered dual in-line memory

module (DDR5 RDIMM)

U24 U25 U26 U27 U28

U30

U31 U32 U33 U34 U35

• Fast data transfer rate: PC5-4800, PC5-5600, PC5-6400

• 96GB (12Gig x 80)

U36

U37 U38 U39 U40

U41 U42 U43 U44

U45

• Dual-rank

• 32 internal banks; 8 groups of 4 banks each

Secondary side

Figure 2: 288-Pin DDR5 RDIMM (R/C-A1)

Options

Marking

• Operating temperature

– Commercial (0°C ≤ T_OPER≤ 95°C)

• Frequency/CAS latency

U501

U502

48B

56B

64B

– 0.416ns @ CL = 40 (DDR5-4800)

– 0.357ns @ CL = 46 (DDR5-5600)

– 0.312ns @ CL = 52 (DDR5-6400)

U600

Primary Side

U500

Secondary Side

CCM005-802248454-56

mtc40f204ws1rc_drx4_rdimm_dierevB.pdf - Rev. D 01/2024

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...11

下载PDF

与MTC40F204WS1RC48B相关器件

型号	品牌	描述	获取价格	数据表
MTC40F204WS1RC56B	MICRON	This technical note describes shipping procedures for preventing memory devices from absor	获取价格
MTC4103N6	CYSTEKEC	N- and P-Channel Enhancement Mode Power MOSFET	获取价格
MTC4103N6-0-T1-G	CYSTEKEC	N- and P-Channel Enhancement Mode Power MOSFET	获取价格
MTC4103N8J	CYSTEKEC	N- AND P-Channel Enhancement Mode MOSFET	获取价格
MTC4103N8J-0-T1-G	CYSTEKEC	N- AND P-Channel Enhancement Mode MOSFET	获取价格
MTC4203BN8J	CYSTEKEC	N- AND P-Channel Enhancement Mode MOSFET	获取价格