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MTC20C2085S1EC48B PDF预览

MTC20C2085S1EC48B

更新时间: 2024-04-09 19:00:25
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
8页 326K
描述
MTC20C2085S1EC - 32GB

MTC20C2085S1EC48B 数据手册

 浏览型号MTC20C2085S1EC48B的Datasheet PDF文件第2页浏览型号MTC20C2085S1EC48B的Datasheet PDF文件第3页浏览型号MTC20C2085S1EC48B的Datasheet PDF文件第4页浏览型号MTC20C2085S1EC48B的Datasheet PDF文件第5页浏览型号MTC20C2085S1EC48B的Datasheet PDF文件第6页浏览型号MTC20C2085S1EC48B的Datasheet PDF文件第7页 
32GB (x72, DR) 288-Pin DDR5 ECC UDIMM  
Features  
DDR5 SDRAM EUDIMM Addendum  
MTC20C2085S1EC – 32GB  
16Gb Die Revision A  
Features  
Options  
Marking  
Information provided here is in addition to or super-  
sedes information provided in the Micron DDR5  
UDIMM Core data sheet.  
Operating temperature  
Commercial (0°C TOPER 95°C)  
Frequency/CAS latency  
C
48B  
0.416ns @ CL = 40 (DDR5-4800)  
DDR5 functionality and operations supported as  
defined in the component data sheet  
Figure 1: 288-Pin DDR5 EUDIMM (R/C-E0)  
Features and specifications defined in the Micron  
DDR5 UDIMM core data sheet  
U1  
288-pin, DDR5 unbuffered ECC dual in-line memory  
U2  
module (DDR5 EUDIMM)  
Fast data transfer rate: PC5-4800  
32GB (4Gig x 72)  
U3  
U4  
U5  
U6  
U7  
U8  
U9  
U10  
U11  
U12  
Primary side  
Dual-rank  
32 internal banks; 8 groups of 4 banks each  
Supports ECC error detection and correction  
U13  
U14  
U15  
U16  
U17  
U18  
U19  
U20  
U21  
U22  
Secondary side  
Table 1: Addressing  
Parameter  
32GB  
Row address 1  
64K (R0-R15)  
1K (C0-C9)  
Column address 1  
Device bank group address 1  
8 (BG0-BG2)  
4 (BA0-BA1)  
Device bank address per bank group 1  
Device configuration  
16Gb (2Gb x 8), 32 banks  
2 (CS0_n, CS1_n)  
Module rank address  
Notes: 1. These parameters represent the logical address state of the CA bus for different commands. Refer to the command  
truth table in the component data sheet.  
Table 2: Part Numbers and Timing Parameters – 32GB Modules  
Clock Cycles  
(CL-nRCD-nRP)  
Module  
Density  
Module  
Bandwidth  
Memory Clock/  
Data Rate  
Part Number  
Configuration  
MTC20C2085S1EC48BA1  
32GB  
4Gb x 72  
38.4 GB/s  
0.416ns/4800 MT/s  
40-39-39  
Notes: 1. Base device: MT60B2G8, 16Gb DDR5 SDRAM Die Revision A. The data sheet for the base device can be found on  
micron.com.  
CCM005-802248454-36  
mtc20c2085s1ec_drx8_eudimm_dierevA.pdf - Rev. B 12/2022  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2021 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

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