Datasheet > MT47H128M8SH-25E IT

MT47H128M8SH-25E IT

更新时间： 2024-04-09 19:00:08

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
141页	2212K
描述
1Gb: x4, x8, x16 DDR2 SDRAM

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MT47H128M8SH-25E IT 数据手册

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1Gb: x4, x8, x16 DDR2 SDRAM

Features

DDR2 SDRAM

MT47H256M4 – 32 Meg x 4 x 8 banks

MT47H128M8 – 16 Meg x 8 x 8 banks

MT47H64M16 – 8 Meg x 16 x 8 banks

Options¹

Marking

Features

• Configuration

• V_DD= 1.8V ±±.1V, V_DDQ= 1.8V ±±.1V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

– 256 Meg x 4 (32 Meg x 4 x 8 banks)

– 128 Meg x 8 (16 Meg x 8 x 8 banks)

– 64 Meg x 16 (8 Meg x 16 x 8 banks)

• FBGA package (Pb-free) – x16

– 84-ball FBGA (8mm x 12.5mm) Die

Rev :H

– 84-ball FBGA (8mm x 12.5mm) Die

Rev :M

• FBGA package (Pb-free) – x4, x8

– 6±-ball FBGA (8mm x 1±mm) Die

Rev :H

– 6±-ball FBGA (8mm x 1±mm) Die

Rev :M

• FBGA package (lead solder) – x16

– 84-ball FBGA (8mm x 12.5mm) Die

Rev :H

• FBGA package (lead solder) – x4, x8

– 6±-ball FBGA (8mm x 1±mm) Die

Rev :H

256M4

128M8

64M16

• Duplicate output strobe (RDQS) option for x8

• DLL to align DQ and DQS transitions with CK

• 8 internal banks for concurrent operation

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1 ^tCK

• Selectable burst lengths (BL): 4 or 8

• Adjustable data-output drive strength

• 64ms, 8192-cycle refresh

• On-die termination (ODT)

• Industrial temperature (IT) option

• Automotive temperature (AT) option

• RoHS-compliant

• Timing – cycle time

• Supports JEDEC clock jitter specification

– 1.875ns @ CL = 7 (DDR2-1±66)

– 2.5ns @ CL = 5 (DDR2-8±±)

– 3.±ns @ CL = 5 (DDR2-667)

• Self refresh

-187E

-25E

-3

– Standard

– Low-power

None

• Operating temperature

– Commercial (±°C T_C +85°C)²

– Industrial (–4±°C T_C +95°C;

–4±°C T_A +85°C)

None

• Revision

:H / :M

1. Not all options listed can be combined to

define an offered product. Use the Part

Catalog Search on www.micron.com for

product offerings and availability.

Notes:

2. For extended CT operating temperature see

IDD Table 11 (page 32) Note 7.

CCMTD-1725822587-9658

1GbDDR2.pdf – Rev. AB 09/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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