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MMBR911LT1

更新时间： 2024-02-11 04:43:14

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
6页	83K
描述
NPN Silicon High-Frequency Transistor

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技术参数
数据手册

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MMBR911LT1 技术参数

生命周期：	Active	包装说明：	,
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

MMBR911LT1 数据手册

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by MMBR911LT1/D

SEMICONDUCTOR TECHNICAL DATA

The RF Line

Designed for low noise, wide dynamic range front–end amplifiers and

low–noise VCO’s. Available in a surface–mountable plastic package. This

Motorola small–signal plastic transistor offers superior quality and performance

at low cost.

= 60 mA

LOW NOISE

HIGH–FREQUENCY

TRANSISTOR

•

High Gain–Bandwidth Product

= 7.0 GHz (Typ) @ 30 mA

NPN SILICON

Low Noise Figure

NF = 1.7 dB (Typ) @ 500 MHz

High Gain

= 17 dB (Typ) @ 10 mA/500 MHz

State–of–the–Art Technology

Fine Line Geometry

Ion–Implanted Arsenic Emitters

Gold Top Metallization and Wires

Silicon Nitride Passivation

CASE 318–08, STYLE 6

SOT–23

LOW PROFILE

•

Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

2.0

Collector Current — Continuous

Power Dissipation @ T

Derate linearly above T

case

= 75°C (1)

= 75°C

333

mW/°C

case

D(max)

4.44

–55 to +150

150

Storage Temperature

stg

°C

Maximum Junction Temperature

°C

Jmax

THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Thermal Resistance, Junction to Case

225

°C/W

θJC

DEVICE MARKING

MMBR911LT1 = 7P

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

REV 8

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MMBR911LT1

12 3 4 5 6

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