Datasheet > MAC223A-9

MAC223A-9

更新时间： 2024-01-16 16:07:20

品牌	Logo	应用领域
DIGITRON		三端双向交流开关
页数	文件大小	规格书
3页	173K
描述
SILICON BIDIRECTIONAL THYRISTORS

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技术参数
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MAC223A-9 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.63
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN LEAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	TRIAC	Base Number Matches：	1

MAC223A-9 数据手册

D I G I T R O N S E M I C O N D U C T O R S

MAC223(A) SERIES

SILICON BIDIRECTIONAL THYRISTORS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS (T_J= 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage⁽¹⁾

(T_J= -40 to +125°C, ½ sine wave, 50 to 60Hz, gate open)

MAC223-3, MAC223A-3

100

200

300

400

500

600

700

800

MAC223-4, MAC223A-4

MAC223-5, MAC223A-5

V_DRM

Volts

MAC223-6, MAC223A-6

MAC223-7, MAC223A-7

MAC223-8, MAC223A-8

MAC223-9, MAC223A-9

MAC223-10, MAC223A-10

RMS on-state current (Full cycle sine wave, 50 to 60Hz, T_C= 80°C)

I_T(RMS)

I_TSM

Amps

Peak non-repetitive surge current

(1 cycle, 60Hz, T_C= 80°C, preceded and followed by rated current)

250

Circuit fusing considerations (t = 8.3ms)

Peak gate current (t ≤ 2µs)

I²t

I_GM

260

A²s

Amps

Volts

Watts

°C

2.0

Peak gate voltage (t ≤ 2µs)

V_GM

P_GM

P_G(AV)

T_J

±10

Peak gate power (t ≤ 2µs)

0.5

Average gate power (T_C= 80°C, t ≤ 8.3ms)

Operating junction temperature range

Storage temperature range

-40 to +125

-40 to +150

T_stg

°C

Mounting torque

In. lb.

Note 1: V_DRMfor all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are

exceeded.

THERMAL CHARACTERISTICS

Characteristic

Thermal resistance, junction to case

Thermal resistance, junction to ambient

Symbol

R_ӨJC

Maximum

Unit

°C/W

1.2

R_ӨJA

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ.

Max

Unit

(2)

Peak blocking current

(V_D= Rated V_DRM, T_J= 25°C)

(V_D= Rated V_DRM, T_J= 125°C)

I_DRM

µA

Peak on-state voltage

V_TM

Volts

(I_TM= 35A peak, pulse width ≤ 2ms, duty cycle ≤ 2%.)

1.4

1.85

Gate trigger current (continuous dc)

(V_D= 12V, R_L= 100Ω)

I_GT

MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)

MT2(-),G(+) “A” suffix only

Gate trigger voltage (continuous dc)

(V_D= 12V, R_L= 100Ω)

MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)

MT2(-),G(+) “A” suffix only

1.1

1.3

2.0

2.5

Volts

V_GT

(V_D= Rated V_DRM, R_L= 10kΩ, T_J= 125°C)

MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)

MT2(-),G(+) “A” suffix only

0.2

0.4

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130131

12 3

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