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M93S46-BN3/W PDF预览

M93S46-BN3/W

更新时间: 2023-02-26 14:27:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
34页 472K
描述
IC,SERIAL EEPROM,64X16,CMOS,DIP,8PIN,PLASTIC

M93S46-BN3/W 数据手册

 浏览型号M93S46-BN3/W的Datasheet PDF文件第2页浏览型号M93S46-BN3/W的Datasheet PDF文件第3页浏览型号M93S46-BN3/W的Datasheet PDF文件第4页浏览型号M93S46-BN3/W的Datasheet PDF文件第5页浏览型号M93S46-BN3/W的Datasheet PDF文件第6页浏览型号M93S46-BN3/W的Datasheet PDF文件第7页 
M93S66, M93S56  
M93S46  
4Kbit, 2Kbit and 1Kbit (16-bit wide)  
MICROWIRE Serial Access EEPROM with Block Protection  
FEATURES SUMMARY  
Industry Standard MICROWIRE Bus  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M93Sx6  
2.5 to 5.5V for M93Sx6-W  
1.8 to 5.5V for M93Sx6-R  
8
Single Organization: by Word (x16)  
Programming Instructions that work on: Word  
or Entire Memory  
1
Self-timed Programming Cycle with Auto-  
Erase  
PDIP8 (BN)  
User Defined Write Protected Area  
Page Write Mode (4 words)  
Ready/Busy Signal During Programming  
Speed:  
8
1MHz Clock Rate, 10ms Write Time  
(Current product, identified by process  
identification letter F or M)  
1
SO8 (MN)  
150 mil width  
2MHz Clock Rate, 5ms Write Time (New  
Product, identified by process  
identification letter W or G)  
Sequential Read Operation  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
TSSOP8 (DS)  
3x3mm body size  
TSSOP8 (DW)  
169 mil width  
April 2004  
1/34  

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