Datasheet > KGF1531P

KGF1531P

更新时间： 2024-01-25 08:49:45

品牌	Logo	应用领域
冲电气 - OKI		放大器光电二极管晶体管
页数	文件大小	规格书
7页	168K
描述
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, SOT-23, 5 PIN

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KGF1531P 技术参数

生命周期：	Obsolete	零件包装代码：	SOT-23
包装说明：	SMALL OUTLINE, R-PDSO-G5	针数：	5
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.78
配置：	SINGLE WITH BUILT-IN RESISTOR AND CAPACITOR	最小漏源击穿电压：	4 V
最大漏极电流 (ID)：	0.05 A	FET 技术：	JUNCTION
最高频带：	L BAND	JESD-30 代码：	R-PDSO-G5
JESD-609代码：	e2	元件数量：	1
端子数量：	5	工作模式：	DEPLETION MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN SILVER	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	GALLIUM ARSENIDE	Base Number Matches：	1

ODRKGF1531P-01

Issue Date:Sep 30, 2003

Electronic Components

KGF1531P

Dual Gate IC

GENERAL DESCRIPTION

The KGF1531P is a high-performance GaAs FET small-signal dual gate mixer for the L-band frequencies that

feature features low voltage operation, low current operation, high conversion gain, and low distortion. The

KGF1531P specifications are guaranteed to a fixed matching circuit for 3V and 1.9GHz; external

impedance-matching circuits are also required. Because of its high 3^rdorder intercept point, the KGF1531P is

ideal as a small-signal receiving mixer for L-band personal handy phones, such as digital keying cordless phone

that require low inter-modulation properties.

FEATURES

•

Low voltage and low current operation: 3V, <8mA

Specification guaranteed as the mixer operation to fixed matching circuits for 3V, .9GHz

High conversion gain: 12dB(typ.) at 1.9GHz

Low distortion: 3^rd-order intercept point: 12.5dBm(typ.) at 1.9GHz

Self-bias circuit configuration with built-in source capacitor

Package: SOT-23-5 with lead-free plating terminals

FUNCTION DIAGRAM

(5) GND

(4) Drain

(1) Gate 1 (2) N.C. (3) Gate 2

12 3 4 5 6 7

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