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K9K1208Q0C-HCB0 PDF预览

K9K1208Q0C-HCB0

更新时间: 2024-02-18 14:37:37
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
39页 366K
描述
Flash, 64MX8, 55ns, PBGA63

K9K1208Q0C-HCB0 数据手册

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K9K1208Q0C  
K9K1208D0C  
K9K1208U0C  
K9K1216Q0C  
K9K1216D0C  
K9K1216U0C  
FLASH MEMORY  
Document Title  
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial issue.  
Sep. 12th 2002  
Advance  
1.0  
1.Pin assignment of TBGA dummy ball is changed.  
(before) DNU --> (after) N.C  
Jan. 3rd 2003  
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34)  
3. Add the data protection Vcc guidence for 1.8V device - below about  
1.1V. (Page 35)  
4. Add the specification of Block Lock scheme.(Page 29~32)  
5. Pin assignment of TBGA A3 ball is changed.  
(before) N.C --> (after) Vss  
2.0  
1. The Maximum operating current is changed.  
Read : Icc1 20mA-->30mA  
Program : Icc2 20mA-->40mA  
Erase : Icc3 20mA-->40mA  
Jan. 17th 2003  
Preliminary  
Preliminary  
2.1  
2.2  
The min. Vcc value 1.8V devices is changed.  
Mar. 5th 2003  
K9K12XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V  
Pb-free Package is added.  
K9K1208U0C-HCB0,HIB0  
K9K12XXQ0C-HCB0,HIB0  
K9K1216U0C-HCB0,HIB0  
K9K1216Q0C-HCB0,HIB0  
Mar. 13rd 2003  
2.3  
2.4  
Errata is added.(Front Page)-K9K12XXQ0C  
tWC tWP tRC tREH tRP tREA tCEA  
Mar. 17th 2003  
Apr. 4th 2003  
Specification  
45  
25  
50  
15  
25 30  
45  
55  
Relaxed value 60 40 60 20 40 40  
1. Max. Thickness of TBGA packge is changed.  
0.09±0.10(Before) --> 1.10±0.10(After)  
2. New definition of the number of invalid blocks is added.  
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb  
memory space.)  
1. The guidence of LOCKPRE pin usage is changed.  
Don’ t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTO-  
READ, connect it Vss.(Before)  
2.5  
Jul. 4th 2003  
--> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect  
it Vss or leave it N.C(After)  
2. 2.65V device is added.  
3. Note is added.  
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for  
durations of 20 ns or less.)  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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