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HM628512B PDF预览

HM628512B

更新时间: 2022-12-13 08:26:07
品牌 Logo 应用领域
日立 - HITACHI 静态存储器
页数 文件大小 规格书
18页 87K
描述
4 M SRAM (512-kword x 8-bit)

HM628512B 数据手册

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HM628512B Series  
4 M SRAM (512-kword × 8-bit)  
ADE-203-903D (Z)  
Rev. 3.0  
Aug. 24, 1999  
Description  
The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,  
higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The  
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP,  
is available for high density mounting. The HM628512B is suitable for battery backup system.  
Features  
Single 5 V supply  
Access time: 55/70 ns (max)  
Power dissipation  
Active: 50 mW/MHz (typ)  
Standby: 10 µW (typ)  
Completely static memory. No clock or timing strobe required  
Equal access and cycle times  
Common data input and output: Three state output  
Directly TTL compatible: All inputs and outputs  
Battery backup operation  

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