Datasheet > GE08P20

GE08P20

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	245K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GE08P20 数据手册

Pb Free Plating Product

ISSUED DATE :2006/01/19

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-200V

680mꢀ

-8A

GE08P20

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE08P20 (TO-220 package through-hole version) is available for low-profile applications and suited for

low voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

*RoHS Compliant

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

-200

±20

-8

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

-5

-30

Total Power Dissipation

W/к

Linear Derating Factor

0.77

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

1.3

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GE08P20

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