Datasheet > G2N5401

G2N5401

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	147K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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G2N5401 数据手册

ISSUED DATE :2004/06/09

REVISED DATE :2004/11/29B

GTM

CORPORATION

G2N5401

P N P E P I T AX I A L P L A N A R T A N S I S T O R

Description

The G2N5401 is designed for general purpose applications requiring high breakdown voltages.

Features

*Complementary to NPN Type G2N5551

*High Collector-Emitter Breakdown Voltage (VCEO=150V@I

C=1mA))

Package Dimensions

TO-92

SEAT IN G

PL AN E

Millimeter

Min. Max.

Millimeter

Min. Max.

REF.

4.45

1.02

0.36

4.7

0.51

0.76

0.51

4.44

3.30

12.70

4.7

3.81

1.150 1.390

2.42 2.66

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

Unit

Tstg

-55 ~ +150

-160

CBO

CEO

-150

EBO

-5

-600

Total Power Dissipation

625

Characteristics at Ta = 25к

Symbol

BVCBO

BVCEO

BVEBO

Min.

-160

-150

-5

Typ.

Max.

Unit

Test Conditions

=-100uA,I

=-1mA,I =0

=-10uA,I =0

CB=-120V, I =0

EB=-3V, I =0

E=0

CBO

-50

-0.2

-0.5

-1

400

300

EBO

*VCE(sat)1

*VCE(sat)2

*VBE(sat)1

*VBE(sat)2

*hFE1

=-10mA, I

=-50mA, I

=-10mA, I

=-50mA, I

=-1mA

=-5mA

=-1mA

=-5mA

B=-1mA

=-10mA

=-50mA

100

CE=-5V, I

*hFE2

*hFE3

160

Cob

MHz

CE=-10V, I

C=-10mA, f=100MHz

CB=-10V, f=1MHz, IE=0

* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%

Classification Of hFE

Rank

Range

80-200

100-240

160-400

G2N5401

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