Datasheet > FMM5803X

FMM5803X

更新时间： 2024-02-15 03:36:15

品牌	Logo	应用领域
EUDYNA		放大器射频微波功率放大器
页数	文件大小	规格书
4页	2169K
描述
27.5-31.5GHz Power Amplifier MMIC

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技术参数
数据手册

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FMM5803X 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.17	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	25 dBm
最大工作频率：	31500 MHz	最小工作频率：	27500 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND MEDIUM POWER	Base Number Matches：	1

FMM5803X 数据手册

FMM5803X

27.5-31.5GHz Power Amplifier MMIC

FEATURES

• High Output Power: P

= 30dBm (Typ.)

1dB

• High Gain: G

= 14dB (Typ.)

1dB

= 20% (Typ.)

• High PAE: η

add

• Wide Frequency Band: 27.5-31.5 GHz

• Impedance Matched Zin/Zout = 50Ω

• 0.25µm PHEMT Technology

DESCRIPTION

The FMM5803X is a high-gain, wide band 3-stage

MMIC amplifier designed for operation in the 27.5-31.5 GHz

frequency range. This amplifier has an input and output

designed for use in 50Ω systems.This device is well suited for

point-to-point, and point-to-multi-point(LMDS) communication

applications.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Unit

Rating

Drain Voltage

Gate Voltage

Input Power

-3.0

dBm

Storage Temperature

-65 to +175

-40 to +85

°C

stg

Operating Backside Temperature

Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 6 volts.

2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.

3. This product should be hermetically packaged

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limits

Typ.

Item

Symbol

Conditions

Unit

Min.

Max.

GHz

Frequency Range

27.5 - 31.5

Output Power at 1 dB G.C.P.

dBm

1dB

12*

10** 12**

14*

19*

17**

= 6V

Power Gain at 1 dB G.C.P.

Drain Current

1dB

f = 27.5 ~ 31.5 GHz

*: at f = 27.5-30.0 GHz

**: at f = 30.0-31.5 GHz

700

950

ddrf

= 650mA (Typ.)

Z = Z = 50Ω

add

Power-Added Efficiency

Input Return Loss

-12

-8

Output Return Loss

out

Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)

G.C.P.: Gain Compression Point

Edition 1.1

June 2000

12 3 4

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