Datasheet > EMIX653GAL176HDS

EMIX653GAL176HDS

更新时间： 2022-05-13 14:29:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	350K
描述
Trench IGBT Modules

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数据手册

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EMIX653GAL176HDS 数据手册

SEMiX653GAL176HDs

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1700

619

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 150 °C

438

I_Cnom

450

I_CRM

I_CRM= 2xI_Cnom

900

V_GES

-20 ... 20

SEMiX^®3s

V_CC= 1000 V

V_GE≤ 20 V

V_CES≤ 1700 V

T_j= 125 °C

t_psc

µs

°C

T_j

-55 ... 150

Trench IGBT Modules

SEMiX653GAL176HDs

Features

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

545

365

T_j= 150 °C

I_Fnom

I_FRM

I_FSM

T_j

450

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

900

2900

• Homogeneous Si

-40 ... 150

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

Freewheeling diode

T_c= 25 °C

T_c= 80 °C

I_F

545

365

T_j= 150 °C

• UL recognised file no. E63532

I_Fnom

450

Typical Applications*

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

900

• AC inverter drives

• UPS

• Electronic welders

2900

-40 ... 150

°C

Module

I_t(RMS)

T_stg

600

-40 ... 125

4000

°C

V_isol

AC sinus 50Hz, t = 1 min

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

I_C= 450 A

V_CE(sat)

T_j= 25 °C

2.45

2.9

_GE= 15 V

T_j= 125 °C

2.45

chiplevel

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

V_CE0

r_CE

1.2

1.1

2.8

4.0

6.4

0.9

2.2

3.4

5.8

mΩ

V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 18 mA

T_j= 25 °C

5.2

Ω

V_GE= 0 V

_CE= 1700 V

T_j= 125 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

39.6

1.65

1.31

4200

1.67

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAL

Rev. 1 – 24.06.2010

12 3 4 5

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