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ECP052

更新时间： 2024-01-20 08:09:06
品牌 Logo 应用领域
WJCI 放大器
页数 文件大小 规格书
5页 226K
描述
1/2 Watt, High Linearity InGaP HBT Amplifier

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ECP052 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：PLASTIC, SMT, MS-012, SOIC-8Reach Compliance Code：unknown
风险等级：5.73Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
增益：15 dB最大输入功率 (CW)：22 dBm
JESD-609代码：e0安装特点：SURFACE MOUNT
功能数量：1端子数量：8
最大工作频率：1000 MHz最小工作频率：800 MHz
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：SOP8,.25
电源：5 V射频/微波设备类型：WIDE BAND MEDIUM POWER
子类别：RF/Microwave Amplifiers最大压摆率：300 mA
表面贴装：YES技术：GAAS
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

ECP052 数据手册

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The Communications Edge TM  
ECP052  
½ Watt, High Linearity InGaP HBT Amplifier  
Product Information  
Product Features  
Product Description  
Functional Diagram  
The ECP052 is a high dynamic range driver amplifier in  
a low-cost surface mount package. The InGaP/GaAs  
HBT is able to achieve high performance for various  
narrowband-tuned application circuits with up to +44  
dBm OIP3 and +28.5 dBm of compressed 1dB power. It  
is housed in an industry standard SOIC-8 or 16-pin  
4x4mm QFN SMT package. All devices are 100% RF  
and DC tested.  
• 800 – 1000 MHz  
16  
15  
14  
13  
N/C  
12  
11  
10  
9
1
2
3
4
Vref  
N/C  
• +28.5 dBm P1dB  
RF OUT  
RF OUT  
N/C  
• +44 dBm Output IP3  
• 18 dB Gain @ 900 MHz  
• Single Positive Supply (+5V)  
RF IN  
N/C  
5
6
7
8
• Available in SOIC-8 or 16pin  
4mm QFN package  
ECP052D  
The ECP052 is targeted for use as a driver amplifier in  
wireless infrastructure where high linearity and medium  
power is required. An internal active bias allows the  
ECP052 to maintain high linearity over temperature and  
1
2
3
4
Vref  
N/C  
Vbias  
8
7
6
5
Applications  
RF OUT  
RF OUT  
N/C  
operate directly off  
a
single +5V supply.  
This  
• Final stage amplifiers for  
Repeaters  
combination makes the device an excellent candidate for  
transceiver line cards in current and next generation  
multi-carrier 3G base stations.  
RF IN  
N/C  
• Mobile Infrastructure  
ECP052G  
Specifications (1)  
Parameter  
Operational Bandwidth  
Test Frequency  
Gain  
Output P1dB  
Output IP3 (2)  
Test Frequency  
Gain  
Input Return Loss  
Output Return Loss  
Output P1dB  
Output IP3 (2)  
Units Min Typ Max  
MHz  
MHz  
dB  
dBm  
dBm  
MHz  
dB  
800  
1000  
850  
17  
15.5  
+27  
+42.5  
+28  
+44  
900  
17.8  
18  
15.5  
dB  
dB  
7
dBm  
dBm  
+27  
+42.5  
+28.7  
+43  
IS-95A Channel Power  
dBm  
+23  
@ -45 dBc ACPR, 1960 MHz  
Noise Figure  
dB  
mA  
V
7
Operating Current Range, Icc (3)  
Device Voltage, Vcc  
200  
250  
+5  
300  
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.  
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a  
reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100Ω. (ie. total device current typically will be 262 mA.)  
Absolute Maximum Rating  
Ordering Information  
Parameters  
Rating  
-40 to +85 °C  
-65 to +150 °C  
+28 dBm  
+8 V  
Part No.  
ECP052D  
ECP052G  
Description  
Operating Case Temperature  
Storage Temperature  
RF Input Power (continuous)  
Device Voltage  
½ Watt InGaP HBT Amplifier (16p 4mm Pkg)  
½ Watt InGaP HBT Amplifier (SOIC-8 Pkg)  
ECP052D-PCB900 900 MHz Evaluation Board  
ECP052G-PCB900 900 MHz Evaluation Board  
Device Current  
400 mA  
Device Power  
2 W  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
August 2004  
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com  
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