PRELIMINARY DATA SHEET
256MB Unbuffered DDR SDRAM DIMM
EBD25UC8AMFA (32M words × 64 bits, 1 Rank)
Description
Features
The EBD25UC8AMFA is 32M words × 64 bits, 1 rank
Double Data Rate (DDR) SDRAM unbuffered module,
mounting 8 pieces of 256M bits DDR SDRAM sealed in
• 184-pin socket type dual in line memory module
(DIMM)
PCB height: 31.75mm
Lead pitch: 1.27mm
TSOP package.
Read and write operations are
performed at the cross points of the CK and the /CK.
This high-speed data transfer is realized by the 2 bits
prefetch-pipelined architecture. Data strobe (DQS)
both for read and write are available for high speed and
reliable data bus design. By setting extended mode
register, the on-chip Delay Locked Loop (DLL) can be
set enable or disable. This module provides high
density mounting without utilizing surface mount
• 2.5V power supply
• Data rate: 333Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per
clock cycle
• Bi-directional, data strobe (DQS) is transmitted
/received with data, to be used in capturing data at
the receiver
technology.
Decoupling capacitors are mounted
beside each TSOP on the module board.
• Data inputs and outputs are synchronized with DQS
• 4 internal banks for concurrent operation
(Component)
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• Programmable burst length: 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Refresh cycles: (8192 refresh cycles /64ms)
7.8µs maximum average periodic refresh interval
• 2 variations of refresh
Auto refresh
Self refresh
Document No. E0452E10 (Ver. 1.0)
Date Published January 2004 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2004