Datasheet > DSA250700L

DSA250700L

更新时间： 2024-01-16 16:05:50

品牌	Logo	应用领域
松下 - PANASONIC		放大器光电二极管晶体管
页数	文件大小	规格书
4页	462K
描述
Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, MINI3-G3-B, 3 PIN

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技术参数
数据手册

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DSA250700L 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.78	最大集电极电流 (IC)：	1.5 A
集电极-发射极最大电压：	20 V	配置：	SINGLE
最小直流电流增益 (hFE)：	160	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	220 MHz
Base Number Matches：	1

DSA250700L 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DSA2507

Silicon PNP epitaxial planar type

For low frequency ampliﬁcation

 Features

 Package

ꢀCode

 Low collector-emitter saturation voltage V_CE(sat)

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

Mini3-G3-B

ꢀPin Name

1. Base

 Packaging

2. Emitter

3. Collector

Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

 Marking Symbol: B4

 Absolute Maximum Ratings T_a= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

–30

Unit

–20

–5

–1.5

Peak collector current

I_CP

–5

Collector power dissipation ^*

Junction temperature

P_C

400

°C

T_j

150

Storage temperature

stg

–55 to +150

Note) : Printed circuit board: Copper foil area of 2.25 cm²or more, and the board

thickness of 1.7 mm for the collector portion

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

–30

–20

–5

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage ^*

Transition frequency

V_CBOI_C= –10 mA, I_E= 0

V_CEOI_C= –1 mA, I_B= 0

V_EBOI_E= –10 mA, I_C= 0

h_FE

V_CE= –2 V, I_C= –100 mA

160

560



V_CE(sat)I_C= –500 mA, I_B= –25 mA

–50

220

–150

MHz

f_T

V_CE= –10 V, I_C= –20 mA

Collector output capacitance

C_ob

V_CB= –10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Pulse measurement

Publication date: April 2011

Ver. BED

12 3 4

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