Datasheet > DO-15

DO-15

更新时间： 2022-06-13 23:36:49

品牌	Logo	应用领域
台芯 - TAYCHIPST		整流二极管功效快速恢复二极管
页数	文件大小	规格书
2页	978K
描述
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

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数据手册

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DO-15 数据手册

BYW100-200

200V

1.5A

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

VERY LOW CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

LOW FORWARD AND REVERSE RECOVERY

TIMES

THE SPECIFICATIONS

AND CURVES

ENABLE THE DETERMINATION OF trr AND

I_RMAT 100°C UNDER USERS CONDITIONS

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

200

I_FRM

I_F(AV)

I_FSM

T_stg

1.5

Repetitive peak forward current *

Average forward current *

tp = 5 µs F = 1KHz

Ta = 95°C δ = 0.5

tp=10 ms sinusoidal

Surge non repetitive forward current

Storage temperature range

-65 +150

+ 150

230

°C

Maximum operating junction temperature

T_L

Maximum lead temperature for soldering during 10s at 4mm from

case

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests conditions

Min. Typ. Max.

Unit

I_R*

µA

Reverse leakage

current

V_R= V_RRM

Tj = 25°C

Tj = 100°C

Tj = 25°C

Tj = 100°C

0.5

1.2

V_F**

Forward voltage drop I_F= 4.5 A

I_F= 1.5 A

0.78

0.85

RECOVERY CHARACTERISTICS

Symbol

Tests conditions

Min. Typ. Max.

Unit

trr

I_F= 1 A

dI_F/dt = - 50 A/µs V_R= 30 V

dI_F/dt = -50 A/µs

Tj = 25°C

tfr

I_F= 1.5 A

Measured at 1.1 x V_Fmax.

V_FP

Qrr

I_F= 1.5 A

dI_F/dt = -50 A/µs

Tj = 25°C

dI_F/dt = -20 A/µs V_R≤ 30 V

Tj = 25°C

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Web Site: www.taychipst.com

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