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DN200PG PDF预览

DN200PG

更新时间: 2024-01-14 07:13:32
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
3页 52K
描述
TRANSISTOR,BJT,NPN,12V V(BR)CEO,2A I(C),SOT-223

DN200PG 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):2 A配置:Single
最小直流电流增益 (hFE):350最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):1.1 W
子类别:Other Transistors表面贴装:YES

DN200PG 数据手册

 浏览型号DN200PG的Datasheet PDF文件第2页浏览型号DN200PG的Datasheet PDF文件第3页 
DN200P  
Semiconductor  
NPN Silicon Transistor  
Features  
· Extremely low collector-to-emitter saturation voltage  
( VCE(SAT)= 0.3V Typ. @I /IB=1A/50mA)  
· Suitable for low voltageClarge current drivers  
· Complementary pair with DP200P  
· Switching Application  
Ordering Information  
Type NO.  
Marking  
Package Code  
SOT-223  
DN200P  
N04  
Outline Dimensions  
unit : mm  
PIN Connections  
1. Base  
2. Collector  
3. Emitter  
KST-7004-000  
1

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