2N60
600V N-Channel Power MOSFET
RDS(ON) < 4.4Ω@ VGS = 10V, ID =1A
Fast switching capability
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PRODUCT SUMMARY
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VDS (V)
RDS(on)(Ω)
Current
Lead free in compliance with EU RoHS directive.
Improved dv/dt capability, high ruggedness
2A
600
4.4 @ VGS =10V
Pin Definition:
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Case: TO-251,TO-252,TO-220,ITO-220
TO-262,TO-263 Package
1. Gate
2. Drain
3. Source
Ordering Information
Block Diagram
Package
Part No.
DMP2N60-TU
DMD2N60-TR
DMD2N60-TU
DMT2N60-TU
DMF2N60-TU
DMK2N60-TU
DMG2N60-TU
DMG2N60-TR
Packing
75pcs / Tube
D
TO-251
TO-252
TO-252
TO-220
ITO-220
TO-262
TO-263
TO-263
2.5Kpcs / 13” Reel
75pcs / Tube
G
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
S
800pcs / 13" Reel
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
Drain-Source Voltage
600
V
V
A
A
A
Gate-Source Voltage
±30
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
2.0
ID
2.0
IDM
8.0
115
Single Pulsed (Note 3)
mJ
Avalanche Energy
EAS
TO-220/TO-262/TO-263
ITO-220
44
W
W
W
23
Power Dissipation
PD
TO-251/TO-252
34
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
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May,2015-REV.00
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