Datasheet > CR3416

CR3416

更新时间： 2024-04-09 19:00:31

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	489K
描述
SOT-23

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CR3416 数据手册

CR3416

Trench N-MOSFET 20V, 12mΩ, 8A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

20V

12mΩ

• Uses CRM(CQ) advanced Trench MOS technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

ESD Protected

Applications

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

100% Avalanche Tested

Package Marking and Ordering Information

Part #

Marking

3416

Package

SOT23-3

Reel Size

Tape Width

N/A

Qty

Packing

Reel

CR3416

N/A

3000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

1.25

±8

Avalanche energy, single pulse (L=0.1mH, Rg=25Ω)

Gate-Source voltage

V_GS

ESD

HBM

P_tot

2.5

Power dissipation (T_C= 25°C)

Operating junction and storage temperature

T_j, T _stg

-55...+150

°C

©China Resources Microelectronics (Chongqing) Limited

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