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CMBD1203 PDF预览

CMBD1203

更新时间: 2024-01-03 18:36:04
品牌 Logo 应用领域
RECTRON 整流二极管信号二极管光电二极管
页数 文件大小 规格书
4页 328K
描述
SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 215 mAmpere

CMBD1203 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.6Is Samacsys:N
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.215 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CMBD1203 数据手册

 浏览型号CMBD1203的Datasheet PDF文件第2页浏览型号CMBD1203的Datasheet PDF文件第3页浏览型号CMBD1203的Datasheet PDF文件第4页 
CMBD1201  
THUE  
CMDB1205  
SMALL SIGNAL DIODE  
VOLTAGE RANGE 75 Volts CURRENT 215 mAmpere  
*
FEATURES  
Compact surface mount with same foot print as mini-melf  
High Breakdown Voltage  
*
*
*
*
*
Fast Switching Speed  
400mW Power Dissipation  
General Purpose Switching Applications  
High Conductance  
SOT-23  
0.055(1.40)  
0.047(1.20)  
0.006(0.14)  
0.004(0.09)  
0.046(1.15)  
0.035(0.90)  
MECHANICAL DATA  
* Case: Molded plastic  
0.028(0.70)  
0.020(0.50)  
0.005(0.12)  
0.001(0.02)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.102(2.60)  
0.094(2.40)  
0.019(0.48)  
0.015(0.38)  
* Weight: 0.01 gram  
1
2
0.079(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
3
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ TA=25 C unless otherwise noted)  
SYMBOL  
VRM  
CMBD1201/1202/1203/1204/1205  
100  
UNITS  
RATINGS  
Volts  
Non-Repetitive Peak Reverse Voltage  
Maximum R epetitive Peak Reverse Voltage  
Maximum Working Peak reverse Voltage  
Maximum DC Blocking Voltage  
VRRM  
VRWM  
VR  
75  
Volts  
VRMS  
IFM  
Volts  
Maximum RMS Voltage  
53  
Maximum Forward Comtinuous Current  
Maximum Average Forward Rectified Current  
@t=1.0uS  
500  
215  
mAmps  
mAmps  
IO  
4.0  
1.0  
0.5  
Non-Repetitive Peak Forward Surge Current  
IFSM  
Amps  
@t=1.0mS  
@t=1.0S  
Typical Reverse Recovery Time  
Trr  
4
2
nS  
pF  
Typical Junction Capacitance  
C
T
RθJA  
Typical Thermal Resistance  
500  
K/W  
OC  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to + 150  
O
ELECTRICAL CHARACTERISTICS (@TA=25 C unless otherwise noted)  
SYMBOL  
CMBD1201/1202/1203/1204/1205  
UNITS  
Volts  
CHARACTERISTICS  
@IF=10mA  
0.855  
1.05  
Maximum Instantaneous Forward Voltage  
VF  
@IF=200mA  
nAmps  
uAmps  
@VR=20V  
@VR=75V  
@VR=25V,Tj=150oC  
25  
5
30  
Maximum Instantaneous Reverse Current  
IR  
.
VD 2008-8  
REV: O  

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